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146 uJ=rll EPI-Ial 3ol 6115 ol -9. o /\] = 6ll Development ulz:z) 4 :== . EJ -o E ,J 9 9 xl 9*g ++9 pn€. zI 7-16+= PR+e. Device tz}. 7I* E= aBol Sjl€ zl+g "J++. Diborane €4= EBql^] tjEel flee_ 2lol= 71.- Die bonding chip9 lead frameoil d 4rlzl= r+'J. epoxy bonding, eutectic bonding E9 *B ol !l+. Dielectric dsol ,Jfr.g "I d+= g4,<l 9*= Ee. EJEiI =|- {ql zaol= + zlzl +di]= d4= ++E+ d4= d 4"_lol u|. Diffusion Hls.;1 z{=*4 + lgE .37le Lllql^-l +lloltlql E f,EE 4trl7l= r+e o-s HIEiI +E "J+Bql 4+ dE€4= trE+^l7l7l 9+ *Aolq 9s. "l ^le4 'Jd".J €+g 4=+. DRtvE-rN+ E'J+ 9"1. Dicing +lol8 +E Q+el alg Bz[9 aee 846[z1 9aI E4dg , '+?+ +?++= +4. Diode d+= ++ HJ-6Js-s+ 3-szl 6I= F ExI iz}. trI olgE= HI=;1E p€4 N€ ,(lqE i/dql^'i ^Ja+. DIP(dual in-line package) 4=zl iaql *E+ a Hql^l ++^.1 99zl 9l= ^I 4€ EIE 'tlz)z). DI Water(de-ionized water) E +ql +o} il= Fzlol$$ 4lZ 6}0l /l4 ql ^I+61 = gole+. Donor dEEllql +"J zl-ft dz}fi B e E-al Hls.;15 N€ -o s "Js= gf,E-. zlfrdzlts +C d6I HI+iI ol+. Dopants dz}4 4*g zl*gres4 Hls.;1e1 dE €rlE uI# = gr. d?j=E DopantE 3++ s+ql 9l= giol+. Doping Hls.;1e] dE €Ell= HI+l azl flatl p€ E= N€9 Etgg 4t.1,4 Ion Implantation9l gallr-l +"J6I= ag "J6.Iq, "l"I +Eg= gtgg Dopantzll aJuI. Dose ion implantation F 34ql 9alr-l HI=;19 gf,gg + "J 6I= ,)g dose4r 6}q, a- +.J r*g dose*olzlr +4.