107page

1. 산화공정
107page

1. 산화공정
107page

제3절 단위공정
107page

1. 산화공정
107page

제3절 단위공정
107page

100 ^1138 ell olul =4t ^I+g + $,+= 4"14. +l ol8 9 zltB +c e +gr+ zJ4. (1) 4z]r4 +C +aass c*rl zl d4= a4ql= dzlds.sE 961 9s4 o-s 4zl"l Ef, E(B,P,Sb)"l9ql= zlt+ g+gg Eal^140I 6Iq, aact(crystal Growing)rl .J91 4 g-e +";9 = E+E (Dopant)ol 9 all Exl (Conductor)el +Eii (Insulator)^IoJ s-l 4zl4E.E.E zlzl4 ol= Hls.;1(Semiconductor)4r ++ (D aaSc dr-l= e]olEl= _2f,s9 I:l44 dr]=g *€-,\14 54u3aje_E c*rl zl *4 4 d4= o E- ol C+ HJ'"tg Device Process zlAl4 54(Mechanical Properties), 4t}(Oittusion), 4 4(Btching) F9l €".Jg vli. l. (3) 7I*+C d4= ell oltlE E9 Device Process9 g+.J4 r+e 9e= +d6}zl 9all El _ tr _ 41=r.l il B zi ql € .Jg += E E €t(particle, Scratch) E= trl e*el E++ 4 C E ol E E ql +=aI ^'i E "Jg q , +EE vJ +E(Flatness)7} ,q+€ q. t44^-l Slicing, Lapping, Polishing zlB rl pJ,t'il t 4lE(Vibration)E g zl9I "t 6| 4, +lolEl= €_o_e trJzlE "J€trI. E+ 4zl4 SCol SJ.= E"J atr+(Deionized Water)E ^ll46Iq -EE 442)Z *xl 6I-7, a A d (Clean room)9lr-l sl +B ss rEE a ag Szl a| o| 6JtrI. 11! 3tr E +l = I Hls.;1 ^zl= 414617) 9l+ 7lB*a 4eg +T+ +o) izl*4. gn}4eE_ Hls.;1 azlel zlB*ag =-Al tEXoxidation), +t, ^1d44(photo etch), slql+ 4(Ctremical Vapor Deposition), olg+"J (Ion lmplation) F o -a E+g E olql Efl+ 4 +91*Aq ol= ,; 4++49 3€q +El,ilH+. 1. tt4Btr 71. ^lElE ol= IC rzl4l=*Aq 9lq^l d4= elolgg t4"-l(sioz) C+e ot]* +.q6J *zd